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| AUIRLR3105 hexfet ? power mosfet www.irf.com 1 pd - 97703a automotive grade features dynamic dv/dt rating ! "! # $ % $# ! #! &"' $ ( )% "! #" *# +, description !" # $ % & ' ' # !" ( ) ' & absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. s d g hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ gds gate drain source d-pak AUIRLR3105 parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.65 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 -55 to + 175 300 57 0.38 16 max. 25 18 100 3.4 94 61 see fig. 12a, 12b, 15, 16 v (br)dss 55v r ds(on) typ. 30m max 37m 2 www.irf.com s d g s d g repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.55mh, r g = 25 , i as = 15a, v gs =10v. i sd 25a, di/dt 290a/ s, v dd v (br)dss , t j 175c. pulse width 300 s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax ' see fig 12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ( . 0.0 ( 0 ( 1.0 .0 1 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 20 q gs gate-to-source charge ??? ??? 5.6 nc q gd gate-to-drain ("miller") charge ??? ??? 9.0 t d(on) turn-on delay time ??? 8.0 ??? t r rise time ??? 57 ??? t d(off) turn-off delay time ??? 25 ??? ns t f fall time ??? 37 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 710 ??? c oss output capacitance ??? 150 ??? pf c rss reverse transfer capacitance ??? 28 ??? c oss output capacitance ??? 890 ??? c oss output capacitance ??? 110 ??? c oss eff. effective output capacitance ??? 210 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 25 (body diode) a i sm pulsed source current ??? ??? 100 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 52 78 ns q rr reverse recovery charge ??? 82 120 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m v ds = 25v v gs = 5.0v, i d = 13a conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 15a i d = 15a v ds = 44v v gs = 16v v gs = -16v v gs = 5.0v, see fig. 6 & 13 v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c mosfet symbol v dd = 28v i d = 15a r g = 24 conditions r d = 5.0 , . 1 v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 15a ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 44v t j = 25c, i f = 15a, v dd = 28v di/dt = 100a/ s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 0v, v ds = 44v, ? = 1.0mhz www.irf.com 3 ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? d-pak n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m2(+/- 200v ) ??? (per aec-q101-002) human body model class h1a(+/- 500v ) ??? (per aec-q101-001) 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 01 0. 1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20 s pulse width tj = 25c vgs top 1 5v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20 s pulse width tj = 175c vgs top 1 5v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 2. 0 4. 0 6. 0 8. 0 v gs , gate-to-source voltage (v) 0. 01 0. 10 1. 00 10. 00 100. 00 1000. 00 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 20 s pulse width 0 10203040 i d, drain-to-source current (a) 0 5 10 15 20 25 30 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 25v 20 s pulse width fig 4. typical forward transconductance vs. drain current www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 0 10203040 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 15a for test circuit see figure 13 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd n ce 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 25 30 t , case temperature ( c) i , drain current (a) c d fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 25a www.irf.com 7 25 50 75 100 125 150 175 0 20 40 60 80 100 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 6.1a 11a 15a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - - . fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0. 0 0. 5 1. 0 1. 5 2. 0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1. 0e-07 1. 0e-06 1. 0e-05 1. 0e-04 1.0e-03 1. 0e-02 1. 0e-01 tav (sec) 0. 1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bot tom 50% duty cycle i d = 15a www.irf.com 9 fig 17. / 0 # for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period , , + - + + + - - - ? ? ! "#"" ? $ % % ? "#""& # v ds 90% 10% v gs t d(on) t r t d(off) t f '( 1 ) $ 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms 10 www.irf.com * + , -. /0 ' .11 &&1(1 d-pak part marking information 12 1 332 3 / 3/ 2 #"( $ 4#"5 6 www.irf.com 11 ! "# $ * + , tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRLR3105 dpak tube 75 AUIRLR3105 tape and reel 2000 AUIRLR3105tr tape and reel left 3000 AUIRLR3105trl tape and reel right 3000 AUIRLR3105trr www.irf.com 13 2 ( / 0 3 ' +/0, ( & ' 425 ) 1 $ & '6 /07 ( & /0 ' /07 & $ $ ) /0 & ) ' $ & /0 ' & 3 % ' /0 & # ( $ & 0 /0 /0 '( ' ' & 0% ' & /0 ' ' & / ' '6 & 0 /0 ' ' /0 ) /0 ' & /0 ' ' & /0 # ' /0 6 & 8 /0 # 8 / 0 ' ' ) ' 6 # /0 & " ' * 9 +*9, 2 * * *9 $ ' & 8 ( /0 ' *9 % $ 8 7 ( ' $ & /0 /0 ' /0 /"1 :;<=< $ ' ' 425& 8 ( % /0 ' ' $ & $ #!! ( ! 67 !8009 +9"0 +0 ! " # !$ # %&' ()*+& &,- |
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